引用本文: | 刘爽,牟龙华,许旭锋,郭文明.电力电子器件故障对微电网运行可靠性的影响[J].电力系统保护与控制,2017,45(24):63-70.[点击复制] |
LIU Shuang,MU Longhua,XU Xufeng,GUO Wenming.Research on power electronic devices failures’ effect on microgrid operational reliability[J].Power System Protection and Control,2017,45(24):63-70[点击复制] |
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摘要: |
提出计及运行条件影响的电力电子器件短时故障率模型,评估了器件故障对微电网运行可靠性的影响。首先阐述了IGBT和功率二极管两类重要电力电子器件的故障率与微电网运行条件紧密相关,然后基于器件的功率损耗模型与热模型,建立了器件短时停运率模型。结合场景分析法,基于所建模型提出了一套完整的微电网运行可靠性评估方法,评价器件故障对微电网运行可靠性指标的影响。将所提评估方法应用在改进的基准测试系统上,算例结果表明,器件故障对微电网的可靠性具有消极影响,所建可靠性模型相比传统评估方法能够提供更加准确全面的可靠性信息。 |
关键词: 微电网 运行条件 电力电子器件 短时故障率 结温 运行可靠性 |
DOI:10.7667/PSPC161961 |
投稿时间:2016-11-24修订日期:2017-02-03 |
基金项目:国家自然科学基金项目(51407128) |
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Research on power electronic devices failures’ effect on microgrid operational reliability |
LIU Shuang,MU Longhua,XU Xufeng,GUO Wenming |
(College of Electronics and Information Engineering, Tongji University, Shanghai 201804, China) |
Abstract: |
To evaluate the effect of power electronic devices failure on microgrid’s operational reliability, a short-time outage model of power electronic devices considering operation condition influence is proposed. Firstly, it is pointed that the failure rates of IGBT and power diode are tightly connected with microgrid’s operation conditions. According to the power dissipation model and thermal model of devices, the short-time outage model is built. Using scene analysis method, a complete set of reliability evaluation method for microgrid operation based on the established model is proposed to evaluate the impacts of devices failure on microgrid operational reliability index. And the proposed evaluation method is used on the improved benchmark test system. The simulation results show that devices’ failure has negative effect on the microgrid reliability, and the new reliability model can provide more accurate and comprehensive information than traditional evaluation methods. This work is supported by National Natural Science Foundation of China (No. 51407128). |
Key words: microgrid operation condition power electronic device short-time failure rate junction temperature operational reliability |