| 引用本文: | 刘 黎,李 康,黄 萌,刘 懿.基于电压电流特性曲线的MMC子模块IGBT通态损耗在线计算方法[J].电力系统保护与控制,2022,50(23):19-27.[点击复制] |
| LIU Li,LI Kang,HUANG Meng,LIU Yi.On-line calculation method of an IGBT on-state loss of an MMC sub-module based on a voltage and current characteristic curve[J].Power System Protection and Control,2022,50(23):19-27[点击复制] |
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| 摘要: |
| 模块化多电平换流器(modular multilevel converter, MMC)中绝缘栅双极型晶体管(insulated-gate bipolar transistor, IGBT)多运行于高压条件，需采用大量程传感器对集射极电压进行测量，但会产生较大测量误差，制约了通态损耗的准确计算。因此，针对MMC子模块中IGBT提出了一种基于电压电流特性曲线的通态损耗在线计算方法。首先，基于IGBT及二极管特性曲线参数实现了通态压降、集电极电流及结温之间关系模型的二维及三维拟合。其次，对单位电流周期内器件投切模式进行分析，实现通态损耗表达。此外，基于电热比拟相关理论，构建IGBT等效热网络模型。然后，综合考虑器件电流、导通信号及壳温等信息对结温进行反馈修正，进一步形成了IGBT通态损耗在线计算方法。最后，通过实验验证了所提方法的有效性。 |
| 关键词: 绝缘栅双极型晶体管 模块化多电平换流器 特性曲线 通态压降 损耗计算 |
| DOI：DOI:?10.19783/j.cnki.pspc.220215 |
| 投稿时间：2022-02-23修订日期：2022-04-23 |
| 基金项目:国家自然科学基金重点项目资助(51637007)；国网浙江省电力有限公司科学技术项目资助(B311ZS210003) |
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| On-line calculation method of an IGBT on-state loss of an MMC sub-module based on a voltage and current characteristic curve |
| LIU Li,LI Kang,HUANG Meng,LIU Yi |
| (1. Key Laboratory of Control of Power Transmission and Conversion, Ministry of Education, Shanghai Jiao Tong University,
Shanghai 200030, China; 2. Zhoushan Power Supply Company, State Grid Zhejiang Electric Power Co., Ltd.,
Zhoushan 316000, China; 3. School of Electrical Engineering and Automation, Wuhan University, Wuhan 430072, China) |
| Abstract: |
| The insulated-gate bipolar transistor (IGBT) in a modular multilevel converter (MMC) mostly operates under high voltage conditions, and a large-range sensor is required to measure the collector-emitter voltage. However, a large measurement error will occur and this restricts the accurate calculation of the on-state loss. Therefore, an online calculation method of on-state loss based on the voltage-current characteristic curve for the IGBT in the MMC sub-module is proposed. First, two-dimensional and three-dimensional fitting of the relationship model between on-state voltage drop, collector current and junction temperature is achieved based on the characteristic curve parameters of the IGBT and diode. Second, the switching mode of the device in the unit current cycle is analyzed to realize the expression of the on-state loss. In addition, based on the related theory of electric-thermal comparison, an equivalent thermal network model of the IGBT is constructed. Then, comprehensively considering the device current, turn-on signal and case temperature, etc., the junction temperature is corrected by feedback, and the online calculation method for the IGBT on-state loss is further formed. Finally, the effectiveness of the proposed method is verified by experiment.
This work is supported by the Key Project of National Natural Science Foundation of China (No. 51637007). |
| Key words: insulated-gate bipolar transistor modular multilevel converter characteristic curves on-state voltage drop loss calculation |
